Abstract:
A simple and efficient solid iodination method is reported for the fabrication of p-type γ-CuI thin
films. The structural, morphological, optical, electrical and electrochemical properties are studied in order
to utilize γ-CuI thin films as effective hole transporting layer in solid state solar cells. The fabricated films
exhibited p-type conductivity with resistivity of 7.0×10-2 Ωcm, hole concentration of the film was around
1019 cm-3 and the mobility was found to be in the range of 15.07 to 18.34 cm-2 V-1s-1. The cyclic voltammetry
result shows a maximum specific capacitance of 43 mFcm-2 at scan rate of 10 mVs-1. The cyclic stability and
capacitance retention was found to be 99.7%. These findings would assist γ-CuI film as a potential
candidate for multiple applications, such as hole transporting material for solid state solar cells and
electrochemical supercapacitors.
