This study focuses on the fabrication and characterization of Cs2AgBiBr6 double perovskite thin flm for feld-efect transistor (FET) applications. The Cs2AgBiBr6 thin flms were fabricated using a solution process technique ...

The Perovskite is considered as the most alluring successor to the conventional semiconductors to fabricate channel materials in the thin film field effect transistors. The complicated and expensive manufacturing techniques ...