Abstract:
The Perovskite is considered as the most alluring successor to the conventional semiconductors to fabricate
channel materials in the thin film field effect transistors. The complicated and expensive manufacturing
techniques are being used to deposit the silicon semiconducting thin films on the substrates. But the
introduction of Perovskites made a revolutionary pathway in electronics by much easier and less expensive
processing techniques to the deposition of thin films on the insulator surfaces to construct filed effect
transistors. The perovskite FETs have used in various applications including lasers, radiation detections, light
emitting FETs etc., due to their unique opto-electronic properties. Moreover, perovskite-based FET enables direct
measurements of the perovskite material's electronic properties. In this work we reviewed the evolution and
properties of perovskite thin film FETs and their applications. The extremely scalable and quite inexpensive
synthetic and fabrication techniques of these materials under ambient conditions are the other major
advantages. As the Perovskite based solar cells were commercialized, the above-mentioned applications are not
far from being commercialized.
