Abstract:
This article presents the raw and analyzed data from a set of
experiments performed to study the role of junctions on the
electrostatic gating of carbon nanotube (CNT) network field effect
transistor (FET) aptasensors. It consists of the raw data used for the
calculation of junction and bundle densities and describes the
calculation of metallic content of the bundles. In addition, the data
set consists of the electrical measurement data in a liquid gated
environment for 119 different devices with four different CNT
densities and summarizes their electrical properties. The data
presented in this article are related to research article titled
“Metallic-semiconducting junctions create sensing hot-spots in car bon nanotube FET aptasensors near percolation” (doi:10.1016/j.bios.
2018.09.021) [1]
