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Defect, Diffusion and Dopant Properties of NaNiO2: Atomistic Simulation Study

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dc.contributor.author Kaushalya, R.
dc.contributor.author Iyngaran, P.
dc.contributor.author Kuganathan, N.
dc.contributor.author Chroneos, A.
dc.date.accessioned 2021-10-13T03:31:39Z
dc.date.accessioned 2022-07-11T08:25:20Z
dc.date.available 2021-10-13T03:31:39Z
dc.date.available 2022-07-11T08:25:20Z
dc.date.issued 2019
dc.identifier.uri http://repo.lib.jfn.ac.lk/ujrr/handle/123456789/3960
dc.description.abstract Abstract: Sodium nickelate, NaNiO2, is a candidate cathode material for sodium ion batteries due to its high volumetric and gravimetric energy density. The use of atomistic simulation techniques allows the examination of the defect energetics, Na-ion diffusion and dopant properties within the crystal. Here, we show that the lowest energy intrinsic defect process is the Na-Ni anti-site. The Na Frenkel, which introduces Na vacancies in the lattice, is found to be the second most favourable defect process and this process is higher in energy only by 0.16 eV than the anti-site defect. Favourable Na-ion diffusion barrier of 0.67 eV in the ab plane indicates that the Na-ion diffusion in this material is relatively fast. Favourable divalent dopant on the Ni site is Co2+ that increases additional Na, leading to high capacity. The formation of Na vacancies can be facilitated by doping Ti4+ on the Ni site. The promising isovalent dopant on the Ni site is Ga3+. en_US
dc.language.iso en en_US
dc.publisher Energies en_US
dc.subject NaNiO2 en_US
dc.subject Defects en_US
dc.subject Na diffusion en_US
dc.subject Dopants en_US
dc.subject Atomistic simulation en_US
dc.title Defect, Diffusion and Dopant Properties of NaNiO2: Atomistic Simulation Study en_US
dc.type Article en_US


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