Substantial pressure effect on the resistivity and Curie temperature for the diluted magnetic semiconductor Sb 2-xv xTe 3

dc.contributor.author	Dyck, J.S
dc.contributor.author	Ahilan, K.
dc.contributor.author	Aronson, M.C
dc.contributor.author	Uher, C
dc.contributor.author	Lošt'ák, P
dc.date.accessioned	2014-02-02T05:26:56Z
dc.date.accessioned	2022-07-11T09:44:23Z
dc.date.available	2014-02-02T05:26:56Z
dc.date.available	2022-07-11T09:44:23Z
dc.date.issued	2006-07
dc.identifier.issn	03701972
dc.identifier.uri	http://repo.lib.jfn.ac.lk/ujrr/handle/123456789/195
dc.description.abstract	The influence of hydrostatic pressure on the electrical resistivity ρ and ferromagnetic transition temperature T C of bulk, single crystal Sb 1-xV xTe 3 with x = 0.03 is presented. Pressure strongly suppresses ρ at all temperatures, with an overall decrease of about 35% at 1.6 GPa. The peak in ρ, a signature of T C, moves to lower temperature with increasing pressure. An overall suppression of T C near 40% at 1.6 GPa is observed. The results are discussed within the context of a carrier-mediated ferromagnetic exchange interaction.	en_US
dc.language.iso	en	en_US
dc.publisher	WILEY-VCH Verlag GmbH & Co. KGaA	en_US
dc.title	Substantial pressure effect on the resistivity and Curie temperature for the diluted magnetic semiconductor Sb 2-xv xTe 3	en_US
dc.type	Article	en_US