Abstract:
This study reports a facile impregnation method for synthesizing Ni-doped TiO2
nanomaterials using P25-TiO2 as a starting material. The as prepared nanomaterials
were subjected to structural and optical characterizations and subsequently
employed in photovoltaic studies. X-ray diffraction (XRD) and Raman
studies confirmed that Ni doping did not alter the anatase and rutile contents of
P25-TiO2. Also, the presence of the constituent dopants and their ionic states
were confirmed by Energy-Dispersive X-ray (EDX) and X-ray photoelectron
(XPS) spectroscopies. Topographic Atomic Force Microscopic (AFM) images
illustrated that Ni doping had increased the surface roughness of the TiO2.
Optical characterization by UV-Visible spectroscopy revealed that the Ni doping
had caused red shift in light absorption due to reduced TiO2 bandgap and
improved the dye adsorption on TiO2 films. Then, the photocurrent–photovoltage
property of the fabricated devices was investigated and the optimized
0.10 wt% Ni-doped TiO2 photoanode based device exhibited pronounced power
conversion efficiency (PCE) of 6.29% under air mass (AM) 1.5 conditions (100
mWcm-2, 1 sun). Improved charge transport properties were also observed by
the electrochemical impedance spectroscopic (EIS) study for the device with
optimized Ni-doped TiO2 compared to the control device.metal oxides or dopants [3]. However, its overall
performance in the photovoltaic application is still
limited due to poor electron mobility of nano porous
TiO2 [4] and limited solar spectral response of the dye
in the visible region [5, 6]. In the literature, various
attempts have been reported to overcome these limitations
by placing a compact metal oxide blocking
layer on the Transparent Conducting Oxide (TCO),
coating the TiO2 film with a thin layer of a wide band
gap semiconductor, forming composites with TiO2
electrode, modifying the morphology of nanostructured
semiconductors using self-assembled monolayer
[7] / insulator [8] and doping/co-doping the
TiO2 with other elements [9].
Many studies have reported the promising effect of
dopants on the TiO2 based DSSCs. Among the
effective dopants, transition metals (Zn [5, 10], Ag
[11], Nb [12], W [13], Cu [14], etc.) are found to be
superior to non-transition elements as they improve
light absorption and electrical conductivity by
incorporating new impurity energy levels within the
TiO2 band gap or modifying the conduction band or
valence band of the TiO2 [15, 16]. Among the transition
elements, it is noted that high electrical conductivity
of Nickel (Ni) prevents loss of electrons
during electron transfer and thus increases the current
density and efficiency of DSSCs when used as a
dopant [17]. Also, Ni doping on TiO2 improves visible
light harvest through a red shift in the wavelength
of absorption of the solar radiation [18].
Many studies on the influence of Ni-doped TiO2 on
the performance of DSSCs are reported in the literature.
Power conversion efficiencies (PCEs) of 2.86%,
3.60% and 4.04% were demonstrated for DSSCs fabricated
with Ni-doped TiO2 photoanode, where the
doped nanomaterial was synthesized by sol-gel
method [19–21]. In a separate study, Malik and his
group has reported that hydrothermally synthesized
Ni-doped TiO2 based device increases the photovoltaic
current and hence improves the device efficiency
up to 6.72% [22]. A common feature in all the
above doping methods is the treatment of Ni dopant
with a titanium precursor. Alternatively, doping
could be achieved by treating the Ni dopant with premade
TiO2. Moreover, the method of doping also
plays a crucial role in altering the properties of the
TiO2 which in turn strongly influences the corresponding
DSSC performance.
So far, the treatment of Ni dopant with the premade
TiO2 (P25-TiO2) nanomaterial and its influence on the device performance have not been investigated.
Hence, an attempt was made to synthesize the
Ni-doped TiO2 nanomaterial by a facile wet impregnation
method using commercially available P25-
TiO2 and NiCl2.6H2O. This is a very simple approach
which involves introduction of the dopant atoms
directly into the pre-made TiO2 lattice in a liquid
solvent and subsequent removal of the solvent at
high temperature.